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dc.contributor.authorAl-Kamali, M. F. S. H.
dc.contributor.authorBoika, A. A.
dc.contributor.authorKovalenko, D. L.
dc.contributor.authorAl-Ademi, Y. T. A.
dc.contributor.authorDrabysheuskaya, N. E.
dc.contributor.authorAlexeenko, Y. A.
dc.coverage.spatialSanaaru_RU
dc.date.accessioned2023-10-17T06:54:57Z
dc.date.available2023-10-17T06:54:57Z
dc.date.issued2022
dc.identifier.citationEvolution of copper ions in high-silica thin films / M. F. S. H. Al-Kamali [et al.] // Al-Andalus Journal of Applied Sciences. – 2022. – Vol. 9, № 16. – P. 7–30.ru_RU
dc.identifier.urihttps://elib.gstu.by/handle/220612/29005
dc.description.abstractThe paper studies Thin Films based on Silica which doped with Copper Ions (SiO2:CuO) at A Molar Ratio of (1:0.20; 1:0.30; 1:0.40) Deposited on Quartz and Silicon Substrates. The films were obtained by ion sputtering in a gaseous medium (argon/oxygen) from High- Silica targets obtained by the Sol-Gel method. The morphology and structure of the films were studied using scanning electron microscopy and X-ray phase analysis. X-ray phase analysis of the films revealed that the structure of the films is polycrystalline and has a hexagonal structure. It has been established that the reduction of Cu+2 to Cu+ occurs during film preparation in argon, which is confirmed by the analysis of absorption spectra and XRD data. The obtained frequency dependences of the dielectric permittivity of SiO2:CuO films showed a decrease in the dielectric permittivity and dielectric loss tangent in the range of (103 to 106) Hz. It has been found that when the SiO2:CuO film thickness is less than 100 nm, a thin-film capacitor is not always formed. The calculation of the film band gap shows the presence of two energy bands corresponding to the SiO2:CuO and SiO2:Cu2O compositions. The band gap of Eg(CuO) changes with increasing concentration from 3.564 to 2.598 eV, and Eg(Cu2O) changes with increasing concentration from 5.299 to 3.586 eV. A dip corresponding to the plasmon effect is observed in the transmission spectra in the region of 600–650 nm.ru_RU
dc.language.isootherru_RU
dc.publisherAlandalus University for Science and Technologyru_RU
dc.subjectIon Beam Sprayerru_RU
dc.subjectSol-gelru_RU
dc.subjectCopper ionsru_RU
dc.subjectBand gapru_RU
dc.subjectSiO2:CuOru_RU
dc.subjectMorphologyru_RU
dc.subjectHigh-silica thin filmsru_RU
dc.subjectXRDru_RU
dc.subjectSEMru_RU
dc.titleEvolution of copper ions in high-silica thin filmsru_RU
dc.typeArticleru_RU


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