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SiO2:ZnO Thin Films Prepared by Sol-Gel Route And Deposited Using Pulsed Laser Evaporation: Structure, Morphology, and Optical and Electrical Performance

dc.contributor.authorAl-Kamali, M. F. S. H.
dc.contributor.authorBoiko, A. A.
dc.contributor.authorAl-Areqi, N. A. S.
dc.coverage.spatialTaizru_RU
dc.date.accessioned2023-09-25T07:30:14Z
dc.date.available2023-09-25T07:30:14Z
dc.date.issued2022
dc.identifier.citationAl-Kamali, M. F. S. H. SiO2:ZnO Thin Films Prepared by Sol-Gel Route And Deposited Using Pulsed Laser Evaporation: Structure, Morphology, and Optical and Electrical Performance / M. F. S. H. Al-Kamali, A. A. Boiko, N. A. S. Al-Areqi // 2nd International Conference of Science and Administration – 2022 (2nd ICTSA-2022), 7-19 december 2022 : book of abstracts. – Taiz : Taiz University, 2022. – P. 132.ru_RU
dc.identifier.urihttps://elib.gstu.by/handle/220612/28819
dc.language.isoenru_RU
dc.publisherTaiz Universityru_RU
dc.subjectSol-gel methodru_RU
dc.subjectThin filmru_RU
dc.subjectNanoparticleru_RU
dc.subjectPulsed laser evaporationru_RU
dc.subjectElectrical propertiesru_RU
dc.subjectOptical parametersru_RU
dc.titleSiO2:ZnO Thin Films Prepared by Sol-Gel Route And Deposited Using Pulsed Laser Evaporation: Structure, Morphology, and Optical and Electrical Performanceru_RU
dc.typeArticleru_RU


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